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RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
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AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
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AN1955: Thermal Measurement Methodology of RF Power Amplifiers
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AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
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AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
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RF High Power Model
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.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2010
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Initial Release of Data Sheet
1
Oct. 2010
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Added part number MRF8P9040GNR1, ISO and Case Outline 1487--05, p. 1, 19--21
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
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相关代理商/技术参数
MRF8P9040NBR1
功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9040NR1
功能描述:射频MOSFET电源晶体管 HV8 900MHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9210NR3
功能描述:射频MOSFET电源晶体管 HV8 900MHz 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR5
功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR6
功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9300HSR5
功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P9300HSR6
功能描述:射频MOSFET电源晶体管 HV8-900 100W 28V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
